Silicon nitride circuit board and electronic component module using the same
The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t...
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creator | Naba, Takayuki Umehara, Masashi Kato, Hiromasa Kitamori, Noboru |
description | The present invention provides a silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, wherein assuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1−t2|≥0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm. It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. Due to above structure, even if the silicon nitride circuit board has a large difference in thickness between the metal plates attached on front and rear sides of the silicon nitride substrate, TCT properties can be greatly improved. |
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It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. 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It is preferable that a longitudinal width (L1) of the silicon nitride substrate falls within a range from 10 to 200 mm, and a transverse width (L2) of the silicon nitride substrate falls within a range from 10 to 200 mm. Due to above structure, even if the silicon nitride circuit board has a large difference in thickness between the metal plates attached on front and rear sides of the silicon nitride substrate, TCT properties can be greatly improved.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS PRINTED CIRCUITS SEMICONDUCTOR DEVICES |
title | Silicon nitride circuit board and electronic component module using the same |
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