Voltage sensing device
The invention relates to a voltage sensing device for a high and/or medium-voltage power-carrying conductor, the voltages sensing device comprising: * a carrier element (3) with a passageway for receiving the power-carrying conductor, * wherein the carrier element comprises an electrode (4) extendin...
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| creator | Weinmann, Christian Sabo, Andreea Reeken, Rainer Stalder, Michael H Ghosh, Dipankar Lohmeier, Gerhard Busemann, Friedrich A Sebesta, Christopher D Kang, Myungchan Schubert, Bernd Gravermann, Mark Eggert, Sebastian |
| description | The invention relates to a voltage sensing device for a high and/or medium-voltage power-carrying conductor, the voltages sensing device comprising: * a carrier element (3) with a passageway for receiving the power-carrying conductor, * wherein the carrier element comprises an electrode (4) extending in an axial direction of the passageway of the carrier element and operable as a first electrode of the voltage sensing device, wherein * a conductor (1) of the power cable is operable as the second electrode of the voltage sensing device and wherein * the carrier element has a coefficient of thermal expansion that is less than 5×10^−6 1/K at 20 C. |
| format | Patent |
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Busemann, Friedrich A ; Sebesta, Christopher D ; Kang, Myungchan ; Schubert, Bernd ; Gravermann, Mark ; Eggert, Sebastian</creatorcontrib><description>The invention relates to a voltage sensing device for a high and/or medium-voltage power-carrying conductor, the voltages sensing device comprising: * a carrier element (3) with a passageway for receiving the power-carrying conductor, * wherein the carrier element comprises an electrode (4) extending in an axial direction of the passageway of the carrier element and operable as a first electrode of the voltage sensing device, wherein * a conductor (1) of the power cable is operable as the second electrode of the voltage sensing device and wherein * the carrier element has a coefficient of thermal expansion that is less than 5×10^−6 1/K at 20 C.</description><language>eng</language><subject>MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190709&DB=EPODOC&CC=US&NR=10345340B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190709&DB=EPODOC&CC=US&NR=10345340B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Weinmann, Christian</creatorcontrib><creatorcontrib>Sabo, Andreea</creatorcontrib><creatorcontrib>Reeken, Rainer</creatorcontrib><creatorcontrib>Stalder, Michael H</creatorcontrib><creatorcontrib>Ghosh, Dipankar</creatorcontrib><creatorcontrib>Lohmeier, Gerhard</creatorcontrib><creatorcontrib>Busemann, Friedrich A</creatorcontrib><creatorcontrib>Sebesta, Christopher D</creatorcontrib><creatorcontrib>Kang, Myungchan</creatorcontrib><creatorcontrib>Schubert, Bernd</creatorcontrib><creatorcontrib>Gravermann, Mark</creatorcontrib><creatorcontrib>Eggert, Sebastian</creatorcontrib><title>Voltage sensing device</title><description>The invention relates to a voltage sensing device for a high and/or medium-voltage power-carrying conductor, the voltages sensing device comprising: * a carrier element (3) with a passageway for receiving the power-carrying conductor, * wherein the carrier element comprises an electrode (4) extending in an axial direction of the passageway of the carrier element and operable as a first electrode of the voltage sensing device, wherein * a conductor (1) of the power cable is operable as the second electrode of the voltage sensing device and wherein * the carrier element has a coefficient of thermal expansion that is less than 5×10^−6 1/K at 20 C.</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBALy88pSUxPVShOzSvOzEtXSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8aHBhgbGJqbGJgZORsbEqAEAoEQhkg</recordid><startdate>20190709</startdate><enddate>20190709</enddate><creator>Weinmann, Christian</creator><creator>Sabo, Andreea</creator><creator>Reeken, Rainer</creator><creator>Stalder, Michael H</creator><creator>Ghosh, Dipankar</creator><creator>Lohmeier, Gerhard</creator><creator>Busemann, Friedrich A</creator><creator>Sebesta, Christopher D</creator><creator>Kang, Myungchan</creator><creator>Schubert, Bernd</creator><creator>Gravermann, Mark</creator><creator>Eggert, Sebastian</creator><scope>EVB</scope></search><sort><creationdate>20190709</creationdate><title>Voltage sensing device</title><author>Weinmann, Christian ; Sabo, Andreea ; Reeken, Rainer ; Stalder, Michael H ; Ghosh, Dipankar ; Lohmeier, Gerhard ; Busemann, Friedrich A ; Sebesta, Christopher D ; Kang, Myungchan ; Schubert, Bernd ; Gravermann, Mark ; Eggert, Sebastian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10345340B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Weinmann, Christian</creatorcontrib><creatorcontrib>Sabo, Andreea</creatorcontrib><creatorcontrib>Reeken, Rainer</creatorcontrib><creatorcontrib>Stalder, Michael H</creatorcontrib><creatorcontrib>Ghosh, Dipankar</creatorcontrib><creatorcontrib>Lohmeier, Gerhard</creatorcontrib><creatorcontrib>Busemann, Friedrich A</creatorcontrib><creatorcontrib>Sebesta, Christopher D</creatorcontrib><creatorcontrib>Kang, Myungchan</creatorcontrib><creatorcontrib>Schubert, Bernd</creatorcontrib><creatorcontrib>Gravermann, Mark</creatorcontrib><creatorcontrib>Eggert, Sebastian</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Weinmann, Christian</au><au>Sabo, Andreea</au><au>Reeken, Rainer</au><au>Stalder, Michael H</au><au>Ghosh, Dipankar</au><au>Lohmeier, Gerhard</au><au>Busemann, Friedrich A</au><au>Sebesta, Christopher D</au><au>Kang, Myungchan</au><au>Schubert, Bernd</au><au>Gravermann, Mark</au><au>Eggert, Sebastian</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Voltage sensing device</title><date>2019-07-09</date><risdate>2019</risdate><abstract>The invention relates to a voltage sensing device for a high and/or medium-voltage power-carrying conductor, the voltages sensing device comprising: * a carrier element (3) with a passageway for receiving the power-carrying conductor, * wherein the carrier element comprises an electrode (4) extending in an axial direction of the passageway of the carrier element and operable as a first electrode of the voltage sensing device, wherein * a conductor (1) of the power cable is operable as the second electrode of the voltage sensing device and wherein * the carrier element has a coefficient of thermal expansion that is less than 5×10^−6 1/K at 20 C.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | Voltage sensing device |
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