Semiconductor device, pressure sensor, microphone, and acceleration sensor
A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Kaemmer, Kerstin Feick, Henning Haubold, Marco |
| description | A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10329140B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10329140B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10329140B23</originalsourceid><addsrcrecordid>eNqNyrsKwkAQRuE0FqK-w9pHyMXGVlHENlqHZfaXLMSZZWbj85siD2B1ivOti0eHTyThMFEWdQHfSChdUphNCmdgEy3djFTSIDxPz8F5IoxQn6PwgrbF6u1Hw27pptjfrs_L_YAkPSx5AiP3r66u2uZUH6tz0_5jflA8NX4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device, pressure sensor, microphone, and acceleration sensor</title><source>esp@cenet</source><creator>Kaemmer, Kerstin ; Feick, Henning ; Haubold, Marco</creator><creatorcontrib>Kaemmer, Kerstin ; Feick, Henning ; Haubold, Marco</creatorcontrib><description>A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190625&DB=EPODOC&CC=US&NR=10329140B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190625&DB=EPODOC&CC=US&NR=10329140B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kaemmer, Kerstin</creatorcontrib><creatorcontrib>Feick, Henning</creatorcontrib><creatorcontrib>Haubold, Marco</creatorcontrib><title>Semiconductor device, pressure sensor, microphone, and acceleration sensor</title><description>A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrsKwkAQRuE0FqK-w9pHyMXGVlHENlqHZfaXLMSZZWbj85siD2B1ivOti0eHTyThMFEWdQHfSChdUphNCmdgEy3djFTSIDxPz8F5IoxQn6PwgrbF6u1Hw27pptjfrs_L_YAkPSx5AiP3r66u2uZUH6tz0_5jflA8NX4</recordid><startdate>20190625</startdate><enddate>20190625</enddate><creator>Kaemmer, Kerstin</creator><creator>Feick, Henning</creator><creator>Haubold, Marco</creator><scope>EVB</scope></search><sort><creationdate>20190625</creationdate><title>Semiconductor device, pressure sensor, microphone, and acceleration sensor</title><author>Kaemmer, Kerstin ; Feick, Henning ; Haubold, Marco</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10329140B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Kaemmer, Kerstin</creatorcontrib><creatorcontrib>Feick, Henning</creatorcontrib><creatorcontrib>Haubold, Marco</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kaemmer, Kerstin</au><au>Feick, Henning</au><au>Haubold, Marco</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device, pressure sensor, microphone, and acceleration sensor</title><date>2019-06-25</date><risdate>2019</risdate><abstract>A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10329140B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Semiconductor device, pressure sensor, microphone, and acceleration sensor |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T11%3A21%3A29IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kaemmer,%20Kerstin&rft.date=2019-06-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10329140B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |