Methods and systems for monitoring a non-defect related characteristic of a patterned wafer
Methods and systems for monitoring a non-defect related characteristic of a patterned wafer are provided. One computer-implemented method includes generating output responsive to light from a patterned wafer using an inspection system. The method also includes determining differences between a value...
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creator | Fu, Tao-Yi Muckenhirn, Sylvain Lange, Steve Jiang, Xuguang Gao, Lisheng Gu, Ping |
description | Methods and systems for monitoring a non-defect related characteristic of a patterned wafer are provided. One computer-implemented method includes generating output responsive to light from a patterned wafer using an inspection system. The method also includes determining differences between a value of a non-defect related characteristic of the patterned wafer and a known value of the non-defect related characteristic based on differences between one or more attributes of the output and one or more attributes of other output of the inspection system for a different patterned wafer having the known value of the non-defect related characteristic. |
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One computer-implemented method includes generating output responsive to light from a patterned wafer using an inspection system. The method also includes determining differences between a value of a non-defect related characteristic of the patterned wafer and a known value of the non-defect related characteristic based on differences between one or more attributes of the output and one or more attributes of other output of the inspection system for a different patterned wafer having the known value of the non-defect related characteristic.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190618&DB=EPODOC&CC=US&NR=10324046B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190618&DB=EPODOC&CC=US&NR=10324046B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Fu, Tao-Yi</creatorcontrib><creatorcontrib>Muckenhirn, Sylvain</creatorcontrib><creatorcontrib>Lange, Steve</creatorcontrib><creatorcontrib>Jiang, Xuguang</creatorcontrib><creatorcontrib>Gao, Lisheng</creatorcontrib><creatorcontrib>Gu, Ping</creatorcontrib><title>Methods and systems for monitoring a non-defect related characteristic of a patterned wafer</title><description>Methods and systems for monitoring a non-defect related characteristic of a patterned wafer are provided. 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One computer-implemented method includes generating output responsive to light from a patterned wafer using an inspection system. The method also includes determining differences between a value of a non-defect related characteristic of the patterned wafer and a known value of the non-defect related characteristic based on differences between one or more attributes of the output and one or more attributes of other output of the inspection system for a different patterned wafer having the known value of the non-defect related characteristic.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | Methods and systems for monitoring a non-defect related characteristic of a patterned wafer |
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