Wiring pattern production method and transistor production method
A wiring pattern production method includes forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, forming a photoresist layer including a photoresist material on a surface of the pre...
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creator | Sugizaki, Takashi Kawakami, Yusuke Koizumi, Shohei |
description | A wiring pattern production method includes forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, forming a photoresist layer including a photoresist material on a surface of the precursor film, exposing the photoresist layer with a desired pattern of light, exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer, removing a deprotected protecting group, and depositing an electroless plating catalyst on the exposed surface of the plating base film. |
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CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190611&DB=EPODOC&CC=US&NR=10319911B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190611&DB=EPODOC&CC=US&NR=10319911B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sugizaki, Takashi</creatorcontrib><creatorcontrib>Kawakami, Yusuke</creatorcontrib><creatorcontrib>Koizumi, Shohei</creatorcontrib><title>Wiring pattern production method and transistor production method</title><description>A wiring pattern production method includes forming, on a substrate, a precursor film for a plating base film including a first formation material having an amino group protected by a photoreactive protecting group, forming a photoresist layer including a photoresist material on a surface of the precursor film, exposing the photoresist layer with a desired pattern of light, exposing the precursor film with a desired pattern of light to form the plating base film, developing the exposed photoresist layer, removing a deprotected protecting group, and depositing an electroless plating catalyst on the exposed surface of the plating base film.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAMzyzKzEtXKEgsKUktylMoKMpPKU0uyczPU8hNLcnIT1FIzEtRKClKzCvOLC7JL8JUwMPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4kODDQ2MDS0tDQ2djIyJUQMAdFEyuA</recordid><startdate>20190611</startdate><enddate>20190611</enddate><creator>Sugizaki, Takashi</creator><creator>Kawakami, Yusuke</creator><creator>Koizumi, Shohei</creator><scope>EVB</scope></search><sort><creationdate>20190611</creationdate><title>Wiring pattern production method and transistor production method</title><author>Sugizaki, Takashi ; 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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Wiring pattern production method and transistor production method |
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