Integrated circuit with sensing transistor array, sensing apparatus and measuring method

An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Mescher, Marleen, Klootwijk, Johan Hendrik, De Graaf, Pascal, Marcelis, Bout
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Mescher, Marleen
Klootwijk, Johan Hendrik
De Graaf, Pascal
Marcelis, Bout
description An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10302590B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10302590B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10302590B23</originalsourceid><addsrcrecordid>eNqNi7EKAjEQRNNYiPoPa68Q77CwVRStVbA7lmS9C3hJ2N0g_r0niLXVDG_ejM3tFJVaRiUPLrArQeEZtAOhKCG2oIxDEU0MyIyvxW_BnHE4FgGMHnpCKfzhPWmX_NSM7vgQmn1zYuaH_WV3XFJODUlGR5G0uZ5XtrbVemO3Vf2P8wYRczsz</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><source>esp@cenet</source><creator>Mescher, Marleen ; Klootwijk, Johan Hendrik ; De Graaf, Pascal ; Marcelis, Bout</creator><creatorcontrib>Mescher, Marleen ; Klootwijk, Johan Hendrik ; De Graaf, Pascal ; Marcelis, Bout</creatorcontrib><description>An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190528&amp;DB=EPODOC&amp;CC=US&amp;NR=10302590B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190528&amp;DB=EPODOC&amp;CC=US&amp;NR=10302590B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mescher, Marleen</creatorcontrib><creatorcontrib>Klootwijk, Johan Hendrik</creatorcontrib><creatorcontrib>De Graaf, Pascal</creatorcontrib><creatorcontrib>Marcelis, Bout</creatorcontrib><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><description>An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKAjEQRNNYiPoPa68Q77CwVRStVbA7lmS9C3hJ2N0g_r0niLXVDG_ejM3tFJVaRiUPLrArQeEZtAOhKCG2oIxDEU0MyIyvxW_BnHE4FgGMHnpCKfzhPWmX_NSM7vgQmn1zYuaH_WV3XFJODUlGR5G0uZ5XtrbVemO3Vf2P8wYRczsz</recordid><startdate>20190528</startdate><enddate>20190528</enddate><creator>Mescher, Marleen</creator><creator>Klootwijk, Johan Hendrik</creator><creator>De Graaf, Pascal</creator><creator>Marcelis, Bout</creator><scope>EVB</scope></search><sort><creationdate>20190528</creationdate><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><author>Mescher, Marleen ; Klootwijk, Johan Hendrik ; De Graaf, Pascal ; Marcelis, Bout</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10302590B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Mescher, Marleen</creatorcontrib><creatorcontrib>Klootwijk, Johan Hendrik</creatorcontrib><creatorcontrib>De Graaf, Pascal</creatorcontrib><creatorcontrib>Marcelis, Bout</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mescher, Marleen</au><au>Klootwijk, Johan Hendrik</au><au>De Graaf, Pascal</au><au>Marcelis, Bout</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><date>2019-05-28</date><risdate>2019</risdate><abstract>An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10302590B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title Integrated circuit with sensing transistor array, sensing apparatus and measuring method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T18%3A18%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Mescher,%20Marleen&rft.date=2019-05-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10302590B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true