Integrated circuit with sensing transistor array, sensing apparatus and measuring method
An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte i...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Mescher, Marleen Klootwijk, Johan Hendrik De Graaf, Pascal Marcelis, Bout |
description | An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10302590B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10302590B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10302590B23</originalsourceid><addsrcrecordid>eNqNi7EKAjEQRNNYiPoPa68Q77CwVRStVbA7lmS9C3hJ2N0g_r0niLXVDG_ejM3tFJVaRiUPLrArQeEZtAOhKCG2oIxDEU0MyIyvxW_BnHE4FgGMHnpCKfzhPWmX_NSM7vgQmn1zYuaH_WV3XFJODUlGR5G0uZ5XtrbVemO3Vf2P8wYRczsz</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><source>esp@cenet</source><creator>Mescher, Marleen ; Klootwijk, Johan Hendrik ; De Graaf, Pascal ; Marcelis, Bout</creator><creatorcontrib>Mescher, Marleen ; Klootwijk, Johan Hendrik ; De Graaf, Pascal ; Marcelis, Bout</creatorcontrib><description>An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190528&DB=EPODOC&CC=US&NR=10302590B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190528&DB=EPODOC&CC=US&NR=10302590B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Mescher, Marleen</creatorcontrib><creatorcontrib>Klootwijk, Johan Hendrik</creatorcontrib><creatorcontrib>De Graaf, Pascal</creatorcontrib><creatorcontrib>Marcelis, Bout</creatorcontrib><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><description>An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKAjEQRNNYiPoPa68Q77CwVRStVbA7lmS9C3hJ2N0g_r0niLXVDG_ejM3tFJVaRiUPLrArQeEZtAOhKCG2oIxDEU0MyIyvxW_BnHE4FgGMHnpCKfzhPWmX_NSM7vgQmn1zYuaH_WV3XFJODUlGR5G0uZ5XtrbVemO3Vf2P8wYRczsz</recordid><startdate>20190528</startdate><enddate>20190528</enddate><creator>Mescher, Marleen</creator><creator>Klootwijk, Johan Hendrik</creator><creator>De Graaf, Pascal</creator><creator>Marcelis, Bout</creator><scope>EVB</scope></search><sort><creationdate>20190528</creationdate><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><author>Mescher, Marleen ; Klootwijk, Johan Hendrik ; De Graaf, Pascal ; Marcelis, Bout</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10302590B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Mescher, Marleen</creatorcontrib><creatorcontrib>Klootwijk, Johan Hendrik</creatorcontrib><creatorcontrib>De Graaf, Pascal</creatorcontrib><creatorcontrib>Marcelis, Bout</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mescher, Marleen</au><au>Klootwijk, Johan Hendrik</au><au>De Graaf, Pascal</au><au>Marcelis, Bout</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Integrated circuit with sensing transistor array, sensing apparatus and measuring method</title><date>2019-05-28</date><risdate>2019</risdate><abstract>An integrated circuit sensor array includes a semiconductor substrate; an insulating layer over the substrate; and a first transistor on the insulating layer. The first transistor includes an exposed functionalized channel region in between a source region and a drain region for sensing an analyte in a medium. The integrated circuit sensor array also includes a second transistor formed on the insulating layer, where the second transistor includes an exposed channel region between source and drain regions for sensing a potential of the medium. Further, a voltage bias generator is conductively coupled to the semiconductor substrate for providing the transistors with a bias voltage, the voltage bias generator being responsive to the second transistor.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US10302590B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
title | Integrated circuit with sensing transistor array, sensing apparatus and measuring method |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T18%3A18%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Mescher,%20Marleen&rft.date=2019-05-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10302590B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |