Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby
Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the s...
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creator | Tsai, Ming-Hsing Hung, Ying-Chieh Lin, Yi-Hung Tsau, Hsueh Wen Lee, Da-Yuan Chang, Weng Tsai, Cheng-Yen Lee, JoJo |
description | Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD). |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10297453B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10297453B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10297453B23</originalsourceid><addsrcrecordid>eNqNzLsKwkAQRuE0FqK-w9hpEdBEEUuvWFgIap2smz8YyO6GmUmRt1fEwtLqNB-nH-UXRlygCVJpFTwpw6iDVzK-IKPBVZZq04HpR0025_2UGg4WIh8pyq3VliFUBnYoSJ9gPLph1CtNLRh9O4jGx8Ntd4rftwzSGAsPze7X-SxZrxbLdJuk_5gXw4o9cg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><source>esp@cenet</source><creator>Tsai, Ming-Hsing ; Hung, Ying-Chieh ; Lin, Yi-Hung ; Tsau, Hsueh Wen ; Lee, Da-Yuan ; Chang, Weng ; Tsai, Cheng-Yen ; Lee, JoJo</creator><creatorcontrib>Tsai, Ming-Hsing ; Hung, Ying-Chieh ; Lin, Yi-Hung ; Tsau, Hsueh Wen ; Lee, Da-Yuan ; Chang, Weng ; Tsai, Cheng-Yen ; Lee, JoJo</creatorcontrib><description>Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190521&DB=EPODOC&CC=US&NR=10297453B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190521&DB=EPODOC&CC=US&NR=10297453B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tsai, Ming-Hsing</creatorcontrib><creatorcontrib>Hung, Ying-Chieh</creatorcontrib><creatorcontrib>Lin, Yi-Hung</creatorcontrib><creatorcontrib>Tsau, Hsueh Wen</creatorcontrib><creatorcontrib>Lee, Da-Yuan</creatorcontrib><creatorcontrib>Chang, Weng</creatorcontrib><creatorcontrib>Tsai, Cheng-Yen</creatorcontrib><creatorcontrib>Lee, JoJo</creatorcontrib><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><description>Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLsKwkAQRuE0FqK-w9hpEdBEEUuvWFgIap2smz8YyO6GmUmRt1fEwtLqNB-nH-UXRlygCVJpFTwpw6iDVzK-IKPBVZZq04HpR0025_2UGg4WIh8pyq3VliFUBnYoSJ9gPLph1CtNLRh9O4jGx8Ntd4rftwzSGAsPze7X-SxZrxbLdJuk_5gXw4o9cg</recordid><startdate>20190521</startdate><enddate>20190521</enddate><creator>Tsai, Ming-Hsing</creator><creator>Hung, Ying-Chieh</creator><creator>Lin, Yi-Hung</creator><creator>Tsau, Hsueh Wen</creator><creator>Lee, Da-Yuan</creator><creator>Chang, Weng</creator><creator>Tsai, Cheng-Yen</creator><creator>Lee, JoJo</creator><scope>EVB</scope></search><sort><creationdate>20190521</creationdate><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><author>Tsai, Ming-Hsing ; Hung, Ying-Chieh ; Lin, Yi-Hung ; Tsau, Hsueh Wen ; Lee, Da-Yuan ; Chang, Weng ; Tsai, Cheng-Yen ; Lee, JoJo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10297453B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Ming-Hsing</creatorcontrib><creatorcontrib>Hung, Ying-Chieh</creatorcontrib><creatorcontrib>Lin, Yi-Hung</creatorcontrib><creatorcontrib>Tsau, Hsueh Wen</creatorcontrib><creatorcontrib>Lee, Da-Yuan</creatorcontrib><creatorcontrib>Chang, Weng</creatorcontrib><creatorcontrib>Tsai, Cheng-Yen</creatorcontrib><creatorcontrib>Lee, JoJo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsai, Ming-Hsing</au><au>Hung, Ying-Chieh</au><au>Lin, Yi-Hung</au><au>Tsau, Hsueh Wen</au><au>Lee, Da-Yuan</au><au>Chang, Weng</au><au>Tsai, Cheng-Yen</au><au>Lee, JoJo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><date>2019-05-21</date><risdate>2019</risdate><abstract>Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby |
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