Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby

Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tsai, Ming-Hsing, Hung, Ying-Chieh, Lin, Yi-Hung, Tsau, Hsueh Wen, Lee, Da-Yuan, Chang, Weng, Tsai, Cheng-Yen, Lee, JoJo
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Tsai, Ming-Hsing
Hung, Ying-Chieh
Lin, Yi-Hung
Tsau, Hsueh Wen
Lee, Da-Yuan
Chang, Weng
Tsai, Cheng-Yen
Lee, JoJo
description Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10297453B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10297453B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10297453B23</originalsourceid><addsrcrecordid>eNqNzLsKwkAQRuE0FqK-w9hpEdBEEUuvWFgIap2smz8YyO6GmUmRt1fEwtLqNB-nH-UXRlygCVJpFTwpw6iDVzK-IKPBVZZq04HpR0025_2UGg4WIh8pyq3VliFUBnYoSJ9gPLph1CtNLRh9O4jGx8Ntd4rftwzSGAsPze7X-SxZrxbLdJuk_5gXw4o9cg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><source>esp@cenet</source><creator>Tsai, Ming-Hsing ; Hung, Ying-Chieh ; Lin, Yi-Hung ; Tsau, Hsueh Wen ; Lee, Da-Yuan ; Chang, Weng ; Tsai, Cheng-Yen ; Lee, JoJo</creator><creatorcontrib>Tsai, Ming-Hsing ; Hung, Ying-Chieh ; Lin, Yi-Hung ; Tsau, Hsueh Wen ; Lee, Da-Yuan ; Chang, Weng ; Tsai, Cheng-Yen ; Lee, JoJo</creatorcontrib><description>Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190521&amp;DB=EPODOC&amp;CC=US&amp;NR=10297453B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190521&amp;DB=EPODOC&amp;CC=US&amp;NR=10297453B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tsai, Ming-Hsing</creatorcontrib><creatorcontrib>Hung, Ying-Chieh</creatorcontrib><creatorcontrib>Lin, Yi-Hung</creatorcontrib><creatorcontrib>Tsau, Hsueh Wen</creatorcontrib><creatorcontrib>Lee, Da-Yuan</creatorcontrib><creatorcontrib>Chang, Weng</creatorcontrib><creatorcontrib>Tsai, Cheng-Yen</creatorcontrib><creatorcontrib>Lee, JoJo</creatorcontrib><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><description>Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLsKwkAQRuE0FqK-w9hpEdBEEUuvWFgIap2smz8YyO6GmUmRt1fEwtLqNB-nH-UXRlygCVJpFTwpw6iDVzK-IKPBVZZq04HpR0025_2UGg4WIh8pyq3VliFUBnYoSJ9gPLph1CtNLRh9O4jGx8Ntd4rftwzSGAsPze7X-SxZrxbLdJuk_5gXw4o9cg</recordid><startdate>20190521</startdate><enddate>20190521</enddate><creator>Tsai, Ming-Hsing</creator><creator>Hung, Ying-Chieh</creator><creator>Lin, Yi-Hung</creator><creator>Tsau, Hsueh Wen</creator><creator>Lee, Da-Yuan</creator><creator>Chang, Weng</creator><creator>Tsai, Cheng-Yen</creator><creator>Lee, JoJo</creator><scope>EVB</scope></search><sort><creationdate>20190521</creationdate><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><author>Tsai, Ming-Hsing ; Hung, Ying-Chieh ; Lin, Yi-Hung ; Tsau, Hsueh Wen ; Lee, Da-Yuan ; Chang, Weng ; Tsai, Cheng-Yen ; Lee, JoJo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10297453B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsai, Ming-Hsing</creatorcontrib><creatorcontrib>Hung, Ying-Chieh</creatorcontrib><creatorcontrib>Lin, Yi-Hung</creatorcontrib><creatorcontrib>Tsau, Hsueh Wen</creatorcontrib><creatorcontrib>Lee, Da-Yuan</creatorcontrib><creatorcontrib>Chang, Weng</creatorcontrib><creatorcontrib>Tsai, Cheng-Yen</creatorcontrib><creatorcontrib>Lee, JoJo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsai, Ming-Hsing</au><au>Hung, Ying-Chieh</au><au>Lin, Yi-Hung</au><au>Tsau, Hsueh Wen</au><au>Lee, Da-Yuan</au><au>Chang, Weng</au><au>Tsai, Cheng-Yen</au><au>Lee, JoJo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby</title><date>2019-05-21</date><risdate>2019</risdate><abstract>Various methods and structures formed by those methods are described. In accordance with a method, a first metal-containing layer is formed on a substrate. A second metal-containing layer is formed on the substrate. A material of the first metal-containing layer is different from a material of the second metal-containing layer. A chlorine-based treatment is performed on the first metal-containing layer and the second metal-containing layer. A third metal-containing layer is deposited on the first metal-containing layer and the second metal-containing layer using Atomic Layer Deposition (ALD).</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10297453B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Pre-deposition treatment and atomic layer deposition (ALD) process and structures formed thereby
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T16%3A39%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Tsai,%20Ming-Hsing&rft.date=2019-05-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10297453B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true