Method and system for providing magnetic junctions utilizing high crystallization temperature-containing insertion layer(s)

A magnetic device and method for providing the magnetic device junction are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes a pinned layer, a perpendicular enhancement layer (PEL), an insertion layer between the pinned layer and PEL, a free layer and a nonmagnetic spacer layer between the PEL and free layer. The insertion layer includes at least one magnetic material and at least one high crystallization temperature nonmagnetic material. The PEL is between the insertion layer and the nonmagnetic spacer layer. The free layer is switchable between a plurality of stable magnetic states. The PEL and free and pinned layers each has a perpendicular magnetic anisotropy energy greater than its out-of-plane demagnetization energy. The SO active layer(s) are adjacent to the free layer, carry a current in-plane and exert a SO torque on the free layer due to the current.