Method and system for detecting and correcting problematic advanced process control parameters

The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithog...

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Hauptverfasser: Choi, Dongsub, Tien, David
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creator Choi, Dongsub
Tien, David
description The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10295993B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10295993B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10295993B23</originalsourceid><addsrcrecordid>eNqNjD0KwkAQhbexEPUO4wEETbDYVlFsrNTWMO5OYmD_mBkEb2-UHMDq8d738abmfiZ9Zg-YPMhblCK0mcGTktM-dT_gMvNYC-dHoIjaO0D_wuTIf0dHIoOXlHOAgoxxeGCZm0mLQWgx5swsj4fr_rSikhuSgo4SaXO7bNaV3Vpb76r6H-cDhMk9ew</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and system for detecting and correcting problematic advanced process control parameters</title><source>esp@cenet</source><creator>Choi, Dongsub ; Tien, David</creator><creatorcontrib>Choi, Dongsub ; Tien, David</creatorcontrib><description>The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.</description><language>eng</language><subject>CONTROL OR REGULATING SYSTEMS IN GENERAL ; CONTROLLING ; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS ; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS ; PHYSICS ; REGULATING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190521&amp;DB=EPODOC&amp;CC=US&amp;NR=10295993B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190521&amp;DB=EPODOC&amp;CC=US&amp;NR=10295993B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Choi, Dongsub</creatorcontrib><creatorcontrib>Tien, David</creatorcontrib><title>Method and system for detecting and correcting problematic advanced process control parameters</title><description>The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.</description><subject>CONTROL OR REGULATING SYSTEMS IN GENERAL</subject><subject>CONTROLLING</subject><subject>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</subject><subject>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</subject><subject>PHYSICS</subject><subject>REGULATING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjD0KwkAQhbexEPUO4wEETbDYVlFsrNTWMO5OYmD_mBkEb2-UHMDq8d738abmfiZ9Zg-YPMhblCK0mcGTktM-dT_gMvNYC-dHoIjaO0D_wuTIf0dHIoOXlHOAgoxxeGCZm0mLQWgx5swsj4fr_rSikhuSgo4SaXO7bNaV3Vpb76r6H-cDhMk9ew</recordid><startdate>20190521</startdate><enddate>20190521</enddate><creator>Choi, Dongsub</creator><creator>Tien, David</creator><scope>EVB</scope></search><sort><creationdate>20190521</creationdate><title>Method and system for detecting and correcting problematic advanced process control parameters</title><author>Choi, Dongsub ; Tien, David</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10295993B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>CONTROL OR REGULATING SYSTEMS IN GENERAL</topic><topic>CONTROLLING</topic><topic>FUNCTIONAL ELEMENTS OF SUCH SYSTEMS</topic><topic>MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS</topic><topic>PHYSICS</topic><topic>REGULATING</topic><toplevel>online_resources</toplevel><creatorcontrib>Choi, Dongsub</creatorcontrib><creatorcontrib>Tien, David</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Choi, Dongsub</au><au>Tien, David</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and system for detecting and correcting problematic advanced process control parameters</title><date>2019-05-21</date><risdate>2019</risdate><abstract>The invention may be embodied in a system and method for monitoring and controlling feedback control in a manufacturing process, such as an integrated circuit fabrication process. The process control parameters may include translation, rotation, magnification, dose and focus applied by a photolithographic scanner or stepper operating on silicon wafers. Overlay errors are used to compute measured parameters used in the feedback control process. Statistical parameters are computed, normalized and graphed on a common set of axes for at-a-glance comparison of measured parameters and process control parameters to facilitate the detection of problematic parameters. Parameter trends and context relaxation scenarios are also compared graphically. Feedback control parameters, such as EWMA lambdas, may be determined and used as feedback parameters for refining the APC model that computes adjustments to the process control parameters based on the measured parameters.</abstract><oa>free_for_read</oa></addata></record>
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subjects CONTROL OR REGULATING SYSTEMS IN GENERAL
CONTROLLING
FUNCTIONAL ELEMENTS OF SUCH SYSTEMS
MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS
PHYSICS
REGULATING
title Method and system for detecting and correcting problematic advanced process control parameters
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T19%3A55%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Choi,%20Dongsub&rft.date=2019-05-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10295993B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true