Semiconductor device and method of manufacturing the same

Provided is a semiconductor device including an active region provided in a first conductivity type semiconductor layer and a termination region provided around the active region. A MOS transistor through which a main current flows in a thickness direction of the semiconductor layer is formed in the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yutani, Naoki, Ebiike, Yuji
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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