Manufacturing method of semiconductor device

As a barrier metal film, a titanium film is formed by a sputtering process, and a titanium nitride film is formed to cover the titanium film by a CVD process. Next, the back surface of a semiconductor substrate is cleaned by spraying a cleaning chemical liquid toward the back surface thereof, and a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ikuta, Koji, Kita, Kentaro, Hayashi, Takeshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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