Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device

A semiconductor light-emitting device according to an embodiment of the present disclosure includes a nitride-based first light-emitting layer. The first light-emitting layer has an InaGa1−aN layer (a≥0), and has a plurality of first island-shaped regions that include InbGa1−bN (b>a) inside the I...

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Bibliographische Detailangaben
Hauptverfasser:	Isobe, Yuuki, Kawanishi, Hidekazu
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES USING STIMULATED EMISSION DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A semiconductor light-emitting device according to an embodiment of the present disclosure includes a nitride-based first light-emitting layer. The first light-emitting layer has an InaGa1−aN layer (a≥0), and has a plurality of first island-shaped regions that include InbGa1−bN (b>a) inside the InaGa1−aN layer.