Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge

One illustrative method disclosed herein includes, among other things, forming a conformal piezoelectric material liner layer on at least the opposing lateral sidewalls of a fin, forming a recessed layer of insulating material on opposite sides of the fin and on the conformal piezoelectric material...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Gao, Qun, Siddiqui, Naved, Chou, Anthony I
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Gao, Qun
Siddiqui, Naved
Chou, Anthony I
description One illustrative method disclosed herein includes, among other things, forming a conformal piezoelectric material liner layer on at least the opposing lateral sidewalls of a fin, forming a recessed layer of insulating material on opposite sides of the fin and on the conformal piezoelectric material liner layer, removing portions of the conformal piezoelectric material liner layer positioned above the recessed layer of insulating material to thereby expose a portion of the fin above the recessed upper surface, and forming a gate structure above the recessed layer of insulating material and around a portion of the fin positioned above the recessed upper surface.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10256152B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10256152B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10256152B23</originalsourceid><addsrcrecordid>eNqNjLENwjAURNNQIGCHzwBIJCgMEEREQwXUwXLOzheObdmGgulxBANQ3ZPu3c2L-xlpcH0kp2gUD7aaWrbt8Uo9XixB0o0-cJwKQZ7xdjCQKbAkwxaBlAukkUmkrxSfQYlpOYigsSxmSpiI1S8XxTq_H04beNch-mxapO52KbdVvS_rqql2_zgfbGk82g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge</title><source>esp@cenet</source><creator>Gao, Qun ; Siddiqui, Naved ; Chou, Anthony I</creator><creatorcontrib>Gao, Qun ; Siddiqui, Naved ; Chou, Anthony I</creatorcontrib><description>One illustrative method disclosed herein includes, among other things, forming a conformal piezoelectric material liner layer on at least the opposing lateral sidewalls of a fin, forming a recessed layer of insulating material on opposite sides of the fin and on the conformal piezoelectric material liner layer, removing portions of the conformal piezoelectric material liner layer positioned above the recessed layer of insulating material to thereby expose a portion of the fin above the recessed upper surface, and forming a gate structure above the recessed layer of insulating material and around a portion of the fin positioned above the recessed upper surface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190409&amp;DB=EPODOC&amp;CC=US&amp;NR=10256152B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190409&amp;DB=EPODOC&amp;CC=US&amp;NR=10256152B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Gao, Qun</creatorcontrib><creatorcontrib>Siddiqui, Naved</creatorcontrib><creatorcontrib>Chou, Anthony I</creatorcontrib><title>Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge</title><description>One illustrative method disclosed herein includes, among other things, forming a conformal piezoelectric material liner layer on at least the opposing lateral sidewalls of a fin, forming a recessed layer of insulating material on opposite sides of the fin and on the conformal piezoelectric material liner layer, removing portions of the conformal piezoelectric material liner layer positioned above the recessed layer of insulating material to thereby expose a portion of the fin above the recessed upper surface, and forming a gate structure above the recessed layer of insulating material and around a portion of the fin positioned above the recessed upper surface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLENwjAURNNQIGCHzwBIJCgMEEREQwXUwXLOzheObdmGgulxBANQ3ZPu3c2L-xlpcH0kp2gUD7aaWrbt8Uo9XixB0o0-cJwKQZ7xdjCQKbAkwxaBlAukkUmkrxSfQYlpOYigsSxmSpiI1S8XxTq_H04beNch-mxapO52KbdVvS_rqql2_zgfbGk82g</recordid><startdate>20190409</startdate><enddate>20190409</enddate><creator>Gao, Qun</creator><creator>Siddiqui, Naved</creator><creator>Chou, Anthony I</creator><scope>EVB</scope></search><sort><creationdate>20190409</creationdate><title>Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge</title><author>Gao, Qun ; Siddiqui, Naved ; Chou, Anthony I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10256152B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Gao, Qun</creatorcontrib><creatorcontrib>Siddiqui, Naved</creatorcontrib><creatorcontrib>Chou, Anthony I</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gao, Qun</au><au>Siddiqui, Naved</au><au>Chou, Anthony I</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge</title><date>2019-04-09</date><risdate>2019</risdate><abstract>One illustrative method disclosed herein includes, among other things, forming a conformal piezoelectric material liner layer on at least the opposing lateral sidewalls of a fin, forming a recessed layer of insulating material on opposite sides of the fin and on the conformal piezoelectric material liner layer, removing portions of the conformal piezoelectric material liner layer positioned above the recessed layer of insulating material to thereby expose a portion of the fin above the recessed upper surface, and forming a gate structure above the recessed layer of insulating material and around a portion of the fin positioned above the recessed upper surface.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10256152B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T15%3A09%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Gao,%20Qun&rft.date=2019-04-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10256152B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true