Heat dissipative element for polysilicon resistor bank

An integrated circuit (IC) structure is disclosed. The structure can include: a first heat dissipative element disposed between a pair of shallow trench isolations (STIs) in a substrate, and a first polysilicon resistor in a polysilicon layer positioned over the substrate and the pair of STIs, the f...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gerhardt, Martin, Mikalo, Ricardo P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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