Semiconductor memory devices including protrusion pads
Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The stacking structure may include a step...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Jang, Se Mee Kim, Kwang-Soo |
| description | Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The stacking structure may include a stepwise structure in the contact region. Ones of the plurality of gate electrodes may include a respective pad unit that comprises a step of the stepwise structure. At least one of the pad units may include a base pad and a protrusion pad on the base pad. The protrusion pad may be between and spaced apart from two edges of a surface of the base pad that are perpendicular to an extension direction of the respective gate electrode. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10229929B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10229929B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10229929B23</originalsourceid><addsrcrecordid>eNrjZDALTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE4tVsjMS84pTcnMS1coKMovKSotzszPUyhITCnmYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBkZGlpZGlk5GxsSoAQAGQi6a</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor memory devices including protrusion pads</title><source>esp@cenet</source><creator>Jang, Se Mee ; Kim, Kwang-Soo</creator><creatorcontrib>Jang, Se Mee ; Kim, Kwang-Soo</creatorcontrib><description>Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The stacking structure may include a stepwise structure in the contact region. Ones of the plurality of gate electrodes may include a respective pad unit that comprises a step of the stepwise structure. At least one of the pad units may include a base pad and a protrusion pad on the base pad. The protrusion pad may be between and spaced apart from two edges of a surface of the base pad that are perpendicular to an extension direction of the respective gate electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190312&DB=EPODOC&CC=US&NR=10229929B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190312&DB=EPODOC&CC=US&NR=10229929B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jang, Se Mee</creatorcontrib><creatorcontrib>Kim, Kwang-Soo</creatorcontrib><title>Semiconductor memory devices including protrusion pads</title><description>Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The stacking structure may include a stepwise structure in the contact region. Ones of the plurality of gate electrodes may include a respective pad unit that comprises a step of the stepwise structure. At least one of the pad units may include a base pad and a protrusion pad on the base pad. The protrusion pad may be between and spaced apart from two edges of a surface of the base pad that are perpendicular to an extension direction of the respective gate electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALTs3NTM7PSylNLskvUshNzc0vqlRISS3LTE4tVsjMS84pTcnMS1coKMovKSotzszPUyhITCnmYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBkZGlpZGlk5GxsSoAQAGQi6a</recordid><startdate>20190312</startdate><enddate>20190312</enddate><creator>Jang, Se Mee</creator><creator>Kim, Kwang-Soo</creator><scope>EVB</scope></search><sort><creationdate>20190312</creationdate><title>Semiconductor memory devices including protrusion pads</title><author>Jang, Se Mee ; Kim, Kwang-Soo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10229929B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Jang, Se Mee</creatorcontrib><creatorcontrib>Kim, Kwang-Soo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jang, Se Mee</au><au>Kim, Kwang-Soo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor memory devices including protrusion pads</title><date>2019-03-12</date><risdate>2019</risdate><abstract>Disclosed is a semiconductor memory device may include a substrate including a cell array region and a contact region and a stacking structure including a plurality of insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The stacking structure may include a stepwise structure in the contact region. Ones of the plurality of gate electrodes may include a respective pad unit that comprises a step of the stepwise structure. At least one of the pad units may include a base pad and a protrusion pad on the base pad. The protrusion pad may be between and spaced apart from two edges of a surface of the base pad that are perpendicular to an extension direction of the respective gate electrode.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US10229929B2 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor memory devices including protrusion pads |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T09%3A54%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Jang,%20Se%20Mee&rft.date=2019-03-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10229929B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |