Low temperature thin wafer backside vacuum process with backgrinding tape
Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. Venting provided by the gas escape path reduces formation of bubbles under the ta...
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| creator | Li, Eric J |
| description | Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck. |
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Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LAYERED PRODUCTS ; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190305&DB=EPODOC&CC=US&NR=10224223B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190305&DB=EPODOC&CC=US&NR=10224223B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Li, Eric J</creatorcontrib><title>Low temperature thin wafer backside vacuum process with backgrinding tape</title><description>Vacuum processing, such as a backside metallization (BSM) deposition, is performed on a taped wafer after a gas escape path is formed between a base film of the tape and the wafer frontside surface following backgrind. 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Venting provided by the gas escape path reduces formation of bubbles under the tape. The gas escape path may be provided, for example, by a selective pre-curing of tape adhesive, to breach an edge seal and place the wafer frontside surface internal to the edge seal in fluid communication with an environment external to the edge seal. With the thinned wafer supported by the pre-cured tape, BSM is then deposited while the wafer and tape are cooled, for example, via a cooled electrostatic chuck.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM PERFORMING OPERATIONS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Low temperature thin wafer backside vacuum process with backgrinding tape |
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