Method for simultaneous modification of multiple semiconductor device features

Various technologies for simultaneously making a plurality of modifications to a previously manufactured semiconductor are described herein. A mask layer is applied to a surface of the previously manufactured semiconductor device. A pattern is formed in the mask layer, where the pattern is aligned w...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zortman, William A, Larson, Kurt W, Shul, Randy J, Sniegowski, Jeffry J
Format: Patent
Sprache:eng
Schlagworte:
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