Method for forming a semiconductor device with implanted chalcogen atoms

Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one at...

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Bibliographische Detailangaben

Hauptverfasser:	Brandt, Philip Christoph, Stegner, Andre Rainer, Schulze, Hans-Joachim
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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