Method for forming a semiconductor device with implanted chalcogen atoms

Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one at...

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Hauptverfasser:	Brandt, Philip Christoph, Stegner, Andre Rainer, Schulze, Hans-Joachim
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Brandt, Philip Christoph Stegner, Andre Rainer Schulze, Hans-Joachim
description	Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10205011B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10205011B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10205011B23</originalsourceid><addsrcrecordid>eNqNikEKAjEMAHvxIOof4gOEdsUPKMpePKnnJaTZbaFtio36fRV8gIdhYJi56c-sQTyMcv-SY5kAoXGOJMU_SD_d8zMSwytqgJhrwqLsgQImkokLoEpuSzMbMTVe_bww69Pxeug3XGXgVpG4sA63i7Od3Vnn9t32n-cNtrQ0gw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for forming a semiconductor device with implanted chalcogen atoms</title><source>esp@cenet</source><creator>Brandt, Philip Christoph ; Stegner, Andre Rainer ; Schulze, Hans-Joachim</creator><creatorcontrib>Brandt, Philip Christoph ; Stegner, Andre Rainer ; Schulze, Hans-Joachim</creatorcontrib><description>Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190212&DB=EPODOC&CC=US&NR=10205011B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190212&DB=EPODOC&CC=US&NR=10205011B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Brandt, Philip Christoph</creatorcontrib><creatorcontrib>Stegner, Andre Rainer</creatorcontrib><creatorcontrib>Schulze, Hans-Joachim</creatorcontrib><title>Method for forming a semiconductor device with implanted chalcogen atoms</title><description>Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKAjEMAHvxIOof4gOEdsUPKMpePKnnJaTZbaFtio36fRV8gIdhYJi56c-sQTyMcv-SY5kAoXGOJMU_SD_d8zMSwytqgJhrwqLsgQImkokLoEpuSzMbMTVe_bww69Pxeug3XGXgVpG4sA63i7Od3Vnn9t32n-cNtrQ0gw</recordid><startdate>20190212</startdate><enddate>20190212</enddate><creator>Brandt, Philip Christoph</creator><creator>Stegner, Andre Rainer</creator><creator>Schulze, Hans-Joachim</creator><scope>EVB</scope></search><sort><creationdate>20190212</creationdate><title>Method for forming a semiconductor device with implanted chalcogen atoms</title><author>Brandt, Philip Christoph ; Stegner, Andre Rainer ; Schulze, Hans-Joachim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10205011B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Brandt, Philip Christoph</creatorcontrib><creatorcontrib>Stegner, Andre Rainer</creatorcontrib><creatorcontrib>Schulze, Hans-Joachim</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brandt, Philip Christoph</au><au>Stegner, Andre Rainer</au><au>Schulze, Hans-Joachim</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming a semiconductor device with implanted chalcogen atoms</title><date>2019-02-12</date><risdate>2019</risdate><abstract>Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Method for forming a semiconductor device with implanted chalcogen atoms
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T21%3A44%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Brandt,%20Philip%20Christoph&rft.date=2019-02-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10205011B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true