Method of fabricating FinFET structure

A method of fabricating a semiconductor device includes forming a first well region and a second well region in a semiconductor substrate, forming an isolation region defining a first fin active region and a second fin active region on the semiconductor substrate, forming a sacrificial gate layer on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	You, Junggun, Jeong, Sukhoon
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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