Variable space mandrel cut for self aligned double patterning

The present disclosure relates to semiconductor structures and, more particularly, to variable space mandrel cut for self-aligned double patterning and methods of manufacture. The method includes: forming a plurality of mandrels on a substrate; forming spacers about the plurality of mandrels and exp...

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Bibliographische Detailangaben
Hauptverfasser: Kim, Byoung Youp, Liu, Jinping, Shu, Jiehui
Format: Patent
Sprache:eng
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