Plasma processing method

A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on wh...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Harada, Akitoshi, Takayama, Takamitsu, Yakushiji, Hideaki
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Harada, Akitoshi
Takayama, Takamitsu
Yakushiji, Hideaki
description A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10192719B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10192719B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10192719B23</originalsourceid><addsrcrecordid>eNrjZJAIyEkszk1UKCjKT04tLs7MS1fITS3JyE_hYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBoaWRuaGlk5GxsSoAQADfCKL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Plasma processing method</title><source>esp@cenet</source><creator>Harada, Akitoshi ; Takayama, Takamitsu ; Yakushiji, Hideaki</creator><creatorcontrib>Harada, Akitoshi ; Takayama, Takamitsu ; Yakushiji, Hideaki</creatorcontrib><description>A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DECORATIVE ARTS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GLASS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; METALLURGY ; MINERAL OR SLAG WOOL ; MOSAICS ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; PAPERHANGING ; PERFORMING OPERATIONS ; PRODUCING DECORATIVE EFFECTS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; TARSIA WORK ; TRANSPORTING</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190129&amp;DB=EPODOC&amp;CC=US&amp;NR=10192719B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20190129&amp;DB=EPODOC&amp;CC=US&amp;NR=10192719B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Harada, Akitoshi</creatorcontrib><creatorcontrib>Takayama, Takamitsu</creatorcontrib><creatorcontrib>Yakushiji, Hideaki</creatorcontrib><title>Plasma processing method</title><description>A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DECORATIVE ARTS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GLASS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>MOSAICS</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>PAPERHANGING</subject><subject>PERFORMING OPERATIONS</subject><subject>PRODUCING DECORATIVE EFFECTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>TARSIA WORK</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAIyEkszk1UKCjKT04tLs7MS1fITS3JyE_hYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBoaWRuaGlk5GxsSoAQADfCKL</recordid><startdate>20190129</startdate><enddate>20190129</enddate><creator>Harada, Akitoshi</creator><creator>Takayama, Takamitsu</creator><creator>Yakushiji, Hideaki</creator><scope>EVB</scope></search><sort><creationdate>20190129</creationdate><title>Plasma processing method</title><author>Harada, Akitoshi ; Takayama, Takamitsu ; Yakushiji, Hideaki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10192719B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DECORATIVE ARTS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GLASS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>MOSAICS</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>PAPERHANGING</topic><topic>PERFORMING OPERATIONS</topic><topic>PRODUCING DECORATIVE EFFECTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>TARSIA WORK</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Harada, Akitoshi</creatorcontrib><creatorcontrib>Takayama, Takamitsu</creatorcontrib><creatorcontrib>Yakushiji, Hideaki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Harada, Akitoshi</au><au>Takayama, Takamitsu</au><au>Yakushiji, Hideaki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Plasma processing method</title><date>2019-01-29</date><risdate>2019</risdate><abstract>A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US10192719B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DECORATIVE ARTS
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
GLASS
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
JOINING GLASS TO GLASS OR OTHER MATERIALS
METALLURGY
MINERAL OR SLAG WOOL
MOSAICS
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
PAPERHANGING
PERFORMING OPERATIONS
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
TARSIA WORK
TRANSPORTING
title Plasma processing method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T16%3A09%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Harada,%20Akitoshi&rft.date=2019-01-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10192719B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true