Thin film transistor substrate and display using the same
Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate el...
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| creator | Park, Moonho Ko, Seunghyo Lee, Youngjang Cho, Seongpil Lee, Sungjin Son, Kyungmo Noh, Sangsoon Jeong, Mijin Lee, Sohyung Park, Jaehoon |
| description | Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10186528B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10186528B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10186528B23</originalsourceid><addsrcrecordid>eNrjZLAMycjMU0jLzMlVKClKzCvOLC7JL1IoLk0qBnJLUhUS81IUUjKLC3ISKxVKizPz0hVKMlIVihNzU3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGBoYWZqZGFk5ExMWoAWLou-Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thin film transistor substrate and display using the same</title><source>esp@cenet</source><creator>Park, Moonho ; Ko, Seunghyo ; Lee, Youngjang ; Cho, Seongpil ; Lee, Sungjin ; Son, Kyungmo ; Noh, Sangsoon ; Jeong, Mijin ; Lee, Sohyung ; Park, Jaehoon</creator><creatorcontrib>Park, Moonho ; Ko, Seunghyo ; Lee, Youngjang ; Cho, Seongpil ; Lee, Sungjin ; Son, Kyungmo ; Noh, Sangsoon ; Jeong, Mijin ; Lee, Sohyung ; Park, Jaehoon</creatorcontrib><description>Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190122&DB=EPODOC&CC=US&NR=10186528B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190122&DB=EPODOC&CC=US&NR=10186528B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Park, Moonho</creatorcontrib><creatorcontrib>Ko, Seunghyo</creatorcontrib><creatorcontrib>Lee, Youngjang</creatorcontrib><creatorcontrib>Cho, Seongpil</creatorcontrib><creatorcontrib>Lee, Sungjin</creatorcontrib><creatorcontrib>Son, Kyungmo</creatorcontrib><creatorcontrib>Noh, Sangsoon</creatorcontrib><creatorcontrib>Jeong, Mijin</creatorcontrib><creatorcontrib>Lee, Sohyung</creatorcontrib><creatorcontrib>Park, Jaehoon</creatorcontrib><title>Thin film transistor substrate and display using the same</title><description>Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMycjMU0jLzMlVKClKzCvOLC7JL1IoLk0qBnJLUhUS81IUUjKLC3ISKxVKizPz0hVKMlIVihNzU3kYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSXxosKGBoYWZqZGFk5ExMWoAWLou-Q</recordid><startdate>20190122</startdate><enddate>20190122</enddate><creator>Park, Moonho</creator><creator>Ko, Seunghyo</creator><creator>Lee, Youngjang</creator><creator>Cho, Seongpil</creator><creator>Lee, Sungjin</creator><creator>Son, Kyungmo</creator><creator>Noh, Sangsoon</creator><creator>Jeong, Mijin</creator><creator>Lee, Sohyung</creator><creator>Park, Jaehoon</creator><scope>EVB</scope></search><sort><creationdate>20190122</creationdate><title>Thin film transistor substrate and display using the same</title><author>Park, Moonho ; Ko, Seunghyo ; Lee, Youngjang ; Cho, Seongpil ; Lee, Sungjin ; Son, Kyungmo ; Noh, Sangsoon ; Jeong, Mijin ; Lee, Sohyung ; Park, Jaehoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10186528B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, Moonho</creatorcontrib><creatorcontrib>Ko, Seunghyo</creatorcontrib><creatorcontrib>Lee, Youngjang</creatorcontrib><creatorcontrib>Cho, Seongpil</creatorcontrib><creatorcontrib>Lee, Sungjin</creatorcontrib><creatorcontrib>Son, Kyungmo</creatorcontrib><creatorcontrib>Noh, Sangsoon</creatorcontrib><creatorcontrib>Jeong, Mijin</creatorcontrib><creatorcontrib>Lee, Sohyung</creatorcontrib><creatorcontrib>Park, Jaehoon</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, Moonho</au><au>Ko, Seunghyo</au><au>Lee, Youngjang</au><au>Cho, Seongpil</au><au>Lee, Sungjin</au><au>Son, Kyungmo</au><au>Noh, Sangsoon</au><au>Jeong, Mijin</au><au>Lee, Sohyung</au><au>Park, Jaehoon</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin film transistor substrate and display using the same</title><date>2019-01-22</date><risdate>2019</risdate><abstract>Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Thin film transistor substrate and display using the same |
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