Semiconductor structure and method of manufacturing the same

Semiconductor structure and method of manufacturing the same

A semiconductor structure is provided. A semiconductor substrate has a first conductivity type. A first well is formed in the semiconductor substrate and has a second conductivity type. A first well includes a first region and a second region. The dopant concentration of the first region is higher t...

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Hauptverfasser: Lin, Shin-Cheng, Ho, Yu-Hao, Wu, Cheng-Tsung, Lin, Wen-Hsin
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Lin, Shin-Cheng
Ho, Yu-Hao
Wu, Cheng-Tsung
Lin, Wen-Hsin
description A semiconductor structure is provided. A semiconductor substrate has a first conductivity type. A first well is formed in the semiconductor substrate and has a second conductivity type. A first well includes a first region and a second region. The dopant concentration of the first region is higher than the dopant concentration of the second region. A second well has the first conductivity type and is formed in the first region. A first doped region is formed in the first region and has the second conductivity type different than the first conductivity type. The second doped region has the first conductivity type and is formed in the second well. A third doped region has the first conductivity type and is formed in the second region. A fourth doped region has the second conductivity type and is formed in the first region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor structure and method of manufacturing the same
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