Method for recessing a carbon-doped layer of a semiconductor structure

Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted re...

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Bibliographische Detailangaben

1. Verfasser:	Ryan, Errol Todd
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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