Method for recessing a carbon-doped layer of a semiconductor structure
Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted re...
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| creator | Ryan, Errol Todd |
| description | Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted region thereof, the carbon-depleted region having a modified etch property with an increased etch rate compared to an etch rate of the carbon-doped material layer; and recessing the carbon-depleted region of the carbon-doped material layer by an etching process, with the carbon-depleted region being recessed based upon, in part, the modified etch property of the carbon-depleted region. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10170330B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10170330B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10170330B23</originalsourceid><addsrcrecordid>eNrjZHDzTS3JyE9RSMsvUihKTU4tLs7MS1dIVEhOLErKz9NNyS9ITVHISaxMLVLITwOKF6fmZibn56WUJpcAdRSXFAEZpUWpPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPjTY0MDQ3MDY2MDJyJgYNQAb4TOc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for recessing a carbon-doped layer of a semiconductor structure</title><source>esp@cenet</source><creator>Ryan, Errol Todd</creator><creatorcontrib>Ryan, Errol Todd</creatorcontrib><description>Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted region thereof, the carbon-depleted region having a modified etch property with an increased etch rate compared to an etch rate of the carbon-doped material layer; and recessing the carbon-depleted region of the carbon-doped material layer by an etching process, with the carbon-depleted region being recessed based upon, in part, the modified etch property of the carbon-depleted region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190101&DB=EPODOC&CC=US&NR=10170330B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190101&DB=EPODOC&CC=US&NR=10170330B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ryan, Errol Todd</creatorcontrib><title>Method for recessing a carbon-doped layer of a semiconductor structure</title><description>Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted region thereof, the carbon-depleted region having a modified etch property with an increased etch rate compared to an etch rate of the carbon-doped material layer; and recessing the carbon-depleted region of the carbon-doped material layer by an etching process, with the carbon-depleted region being recessed based upon, in part, the modified etch property of the carbon-depleted region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDzTS3JyE9RSMsvUihKTU4tLs7MS1dIVEhOLErKz9NNyS9ITVHISaxMLVLITwOKF6fmZibn56WUJpcAdRSXFAEZpUWpPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7UkPjTY0MDQ3MDY2MDJyJgYNQAb4TOc</recordid><startdate>20190101</startdate><enddate>20190101</enddate><creator>Ryan, Errol Todd</creator><scope>EVB</scope></search><sort><creationdate>20190101</creationdate><title>Method for recessing a carbon-doped layer of a semiconductor structure</title><author>Ryan, Errol Todd</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10170330B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Ryan, Errol Todd</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ryan, Errol Todd</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for recessing a carbon-doped layer of a semiconductor structure</title><date>2019-01-01</date><risdate>2019</risdate><abstract>Semiconductor structure and methods of fabrication thereof are provided which includes, for instance, providing a carbon-doped material layer within a recess of a semiconductor structure; removing, in part, carbon from the carbon-doped material layer to obtain, at least in part, a carbon-depleted region thereof, the carbon-depleted region having a modified etch property with an increased etch rate compared to an etch rate of the carbon-doped material layer; and recessing the carbon-depleted region of the carbon-doped material layer by an etching process, with the carbon-depleted region being recessed based upon, in part, the modified etch property of the carbon-depleted region.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Method for recessing a carbon-doped layer of a semiconductor structure |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T19%3A09%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Ryan,%20Errol%20Todd&rft.date=2019-01-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10170330B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |