Oxide sintered compact and sputtering target formed from said oxide sintered compact
An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Kurihara, Toshiya Yamaguchi, Yohei Kakuta, Koji |
description | An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10161031B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10161031B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10161031B23</originalsourceid><addsrcrecordid>eNrjZAjxr8hMSVUozswrSS1KTVFIzs8tSEwuUUjMS1EoLigtAYpm5qUrlCQWpaeWKKTlF-UCFaUV5ecqFCdmpijkY9XNw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTi4FKUvNSS-JDgw0NDM0MDYwNnYyMiVEDAMKvOSY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Oxide sintered compact and sputtering target formed from said oxide sintered compact</title><source>esp@cenet</source><creator>Kurihara, Toshiya ; Yamaguchi, Yohei ; Kakuta, Koji</creator><creatorcontrib>Kurihara, Toshiya ; Yamaguchi, Yohei ; Kakuta, Koji</creatorcontrib><description>An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.</description><language>eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181225&DB=EPODOC&CC=US&NR=10161031B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181225&DB=EPODOC&CC=US&NR=10161031B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Kurihara, Toshiya</creatorcontrib><creatorcontrib>Yamaguchi, Yohei</creatorcontrib><creatorcontrib>Kakuta, Koji</creatorcontrib><title>Oxide sintered compact and sputtering target formed from said oxide sintered compact</title><description>An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAjxr8hMSVUozswrSS1KTVFIzs8tSEwuUUjMS1EoLigtAYpm5qUrlCQWpaeWKKTlF-UCFaUV5ecqFCdmpijkY9XNw8CalphTnMoLpbkZFN1cQ5w9dFML8uNTi4FKUvNSS-JDgw0NDM0MDYwNnYyMiVEDAMKvOSY</recordid><startdate>20181225</startdate><enddate>20181225</enddate><creator>Kurihara, Toshiya</creator><creator>Yamaguchi, Yohei</creator><creator>Kakuta, Koji</creator><scope>EVB</scope></search><sort><creationdate>20181225</creationdate><title>Oxide sintered compact and sputtering target formed from said oxide sintered compact</title><author>Kurihara, Toshiya ; Yamaguchi, Yohei ; Kakuta, Koji</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10161031B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>Kurihara, Toshiya</creatorcontrib><creatorcontrib>Yamaguchi, Yohei</creatorcontrib><creatorcontrib>Kakuta, Koji</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kurihara, Toshiya</au><au>Yamaguchi, Yohei</au><au>Kakuta, Koji</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Oxide sintered compact and sputtering target formed from said oxide sintered compact</title><date>2018-12-25</date><risdate>2018</risdate><abstract>An IGZO sintered compact composed of indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the IGZO sintered compact has a flexural strength of 50 MPa or more, and a bulk resistance of 100 mΩcm or less. Provided is a sputtering target capable of suppressing the target cracks and reducing the generation of particles during deposition via DC sputtering, and forming favorable thin films.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US10161031B2 |
source | esp@cenet |
subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
title | Oxide sintered compact and sputtering target formed from said oxide sintered compact |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T11%3A38%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Kurihara,%20Toshiya&rft.date=2018-12-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10161031B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |