Bottom-up epitaxy growth on air-gap buffer

A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The second semiconductor layer includes a recessed portion, the air gap is located in the recessed portion, and the recessed portion has an upwardly-op...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Liu, Sheng-Hsu, Chen, Yi-Wei, Tsai, Chung-Min, Li, Jhen-cyuan, Chen, Chih-Chung, Lu, Man-Ling
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!