Wafer strength by control of uniformity of edge bulk micro defects
Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respec...
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| creator | Huang, I-Che Wang, Ting-Chun Chen, Pu-Fang |
| description | Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10141413B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10141413B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10141413B23</originalsourceid><addsrcrecordid>eNrjZHAKT0xLLVIoLilKzUsvyVBIqlRIzs8rKcrPUchPUyjNy0zLL8rNLKkE8VJT0lMVkkpzshVyM5OL8hVSUtNSk0uKeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfGiwoYGhCRAaOxkZE6MGADLjMfY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Wafer strength by control of uniformity of edge bulk micro defects</title><source>esp@cenet</source><creator>Huang, I-Che ; Wang, Ting-Chun ; Chen, Pu-Fang</creator><creatorcontrib>Huang, I-Che ; Wang, Ting-Chun ; Chen, Pu-Fang</creatorcontrib><description>Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181127&DB=EPODOC&CC=US&NR=10141413B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181127&DB=EPODOC&CC=US&NR=10141413B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Huang, I-Che</creatorcontrib><creatorcontrib>Wang, Ting-Chun</creatorcontrib><creatorcontrib>Chen, Pu-Fang</creatorcontrib><title>Wafer strength by control of uniformity of edge bulk micro defects</title><description>Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKT0xLLVIoLilKzUsvyVBIqlRIzs8rKcrPUchPUyjNy0zLL8rNLKkE8VJT0lMVkkpzshVyM5OL8hVSUtNSk0uKeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJfGiwoYGhCRAaOxkZE6MGADLjMfY</recordid><startdate>20181127</startdate><enddate>20181127</enddate><creator>Huang, I-Che</creator><creator>Wang, Ting-Chun</creator><creator>Chen, Pu-Fang</creator><scope>EVB</scope></search><sort><creationdate>20181127</creationdate><title>Wafer strength by control of uniformity of edge bulk micro defects</title><author>Huang, I-Che ; Wang, Ting-Chun ; Chen, Pu-Fang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10141413B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>Huang, I-Che</creatorcontrib><creatorcontrib>Wang, Ting-Chun</creatorcontrib><creatorcontrib>Chen, Pu-Fang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, I-Che</au><au>Wang, Ting-Chun</au><au>Chen, Pu-Fang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Wafer strength by control of uniformity of edge bulk micro defects</title><date>2018-11-27</date><risdate>2018</risdate><abstract>Some embodiments relate to a silicon wafer having a disc-like silicon body. The wafer includes a central portion circumscribed by a circumferential edge region. A plurality of sampling locations, which are arranged in the circumferential edge region, have a plurality of wafer property values, respectively, which correspond to a wafer property. The plurality of wafer property values differ from one another according to a pre-determined statistical edge region profile.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Wafer strength by control of uniformity of edge bulk micro defects |
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