Row redundancy with distributed sectors

A semiconductor device comprises an embedded flash memory with row redundancy. The embedded flash memory comprises a memory bank that includes multiple physical sectors, where each physical sector comprises a plurality of erase sectors. In the memory bank, multiple portions of an additional erase se...

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Bibliographische Detailangaben
Hauptverfasser: Danon, Kobi, Kotlicki, Uri, Feldman, Arieh, Betser, Yoram
Format: Patent
Sprache:eng
Schlagworte:
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