FinFETs with strained channels and reduced on state resistance

The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion...

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Hauptverfasser:	McArdle, Timothy J, Ray, Shishir K, Sehgal, Akshey, Krishnan, Bharat V, Lee, Rinus Tek Po
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	McArdle, Timothy J Ray, Shishir K Sehgal, Akshey Krishnan, Bharat V Lee, Rinus Tek Po
description	The present disclosure generally relates to semiconductor structures and, more particularly, to finFETs with strained channels and reduced on state resistances and methods of manufacture. The structure includes: a plurality of fin structures comprising doped source and drain regions with a diffusion blocking layer between the doped source and drain regions and an underlying fin region formed within dielectric material.
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title	FinFETs with strained channels and reduced on state resistance
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