Power semiconductor device

The present invention relates to a power semiconductor device which includes: a first conductivity-type silicon carbide semiconductor layer; a switching device which is formed on the silicon carbide semiconductor layer; a second conductivity-type electric field relaxation impurity region which is fo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tanioka, Toshikazu, Tarui, Yoichiro, Oritsuki, Yasunori
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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