Multi-gate transistor

A semiconductor device includes a substrate, first through fourth gate electrodes, and first through fifth fin active pattern. A first recess which is formed in the substrate between the first and second gate electrodes intersecting the second fin active pattern, is filled with a first source/drain...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yi, Ji Hye, Kim, Hyo Jin, Ha, Ryong, Yu, Hyun Kwan, Shin, Dong Suk
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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