Inductive monitoring of conductive trench depth
In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the subst...
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| creator | Iravani, Hassan G Wang, Zhefu Lu, Wei Wang, Zhihong Benvegnu, Dominic J Carlsson, Ingemar Swedek, Boguslaw A Tu, Wen-Chiang |
| description | In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10103073B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10103073B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10103073B23</originalsourceid><addsrcrecordid>eNrjZND3zEspTS7JLEtVyM3PyyzJL8rMS1fIT1NIzodLlBSl5iVnKKSkFpRk8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-NBgQwNDA2MDc2MnI2Ni1AAAXQErWw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Inductive monitoring of conductive trench depth</title><source>esp@cenet</source><creator>Iravani, Hassan G ; Wang, Zhefu ; Lu, Wei ; Wang, Zhihong ; Benvegnu, Dominic J ; Carlsson, Ingemar ; Swedek, Boguslaw A ; Tu, Wen-Chiang</creator><creatorcontrib>Iravani, Hassan G ; Wang, Zhefu ; Lu, Wei ; Wang, Zhihong ; Benvegnu, Dominic J ; Carlsson, Ingemar ; Swedek, Boguslaw A ; Tu, Wen-Chiang</creatorcontrib><description>In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181016&DB=EPODOC&CC=US&NR=10103073B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20181016&DB=EPODOC&CC=US&NR=10103073B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Iravani, Hassan G</creatorcontrib><creatorcontrib>Wang, Zhefu</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><creatorcontrib>Wang, Zhihong</creatorcontrib><creatorcontrib>Benvegnu, Dominic J</creatorcontrib><creatorcontrib>Carlsson, Ingemar</creatorcontrib><creatorcontrib>Swedek, Boguslaw A</creatorcontrib><creatorcontrib>Tu, Wen-Chiang</creatorcontrib><title>Inductive monitoring of conductive trench depth</title><description>In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3zEspTS7JLEtVyM3PyyzJL8rMS1fIT1NIzodLlBSl5iVnKKSkFpRk8DCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSS-NBgQwNDA2MDc2MnI2Ni1AAAXQErWw</recordid><startdate>20181016</startdate><enddate>20181016</enddate><creator>Iravani, Hassan G</creator><creator>Wang, Zhefu</creator><creator>Lu, Wei</creator><creator>Wang, Zhihong</creator><creator>Benvegnu, Dominic J</creator><creator>Carlsson, Ingemar</creator><creator>Swedek, Boguslaw A</creator><creator>Tu, Wen-Chiang</creator><scope>EVB</scope></search><sort><creationdate>20181016</creationdate><title>Inductive monitoring of conductive trench depth</title><author>Iravani, Hassan G ; Wang, Zhefu ; Lu, Wei ; Wang, Zhihong ; Benvegnu, Dominic J ; Carlsson, Ingemar ; Swedek, Boguslaw A ; Tu, Wen-Chiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10103073B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Iravani, Hassan G</creatorcontrib><creatorcontrib>Wang, Zhefu</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><creatorcontrib>Wang, Zhihong</creatorcontrib><creatorcontrib>Benvegnu, Dominic J</creatorcontrib><creatorcontrib>Carlsson, Ingemar</creatorcontrib><creatorcontrib>Swedek, Boguslaw A</creatorcontrib><creatorcontrib>Tu, Wen-Chiang</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Iravani, Hassan G</au><au>Wang, Zhefu</au><au>Lu, Wei</au><au>Wang, Zhihong</au><au>Benvegnu, Dominic J</au><au>Carlsson, Ingemar</au><au>Swedek, Boguslaw A</au><au>Tu, Wen-Chiang</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Inductive monitoring of conductive trench depth</title><date>2018-10-16</date><risdate>2018</risdate><abstract>In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Inductive monitoring of conductive trench depth |
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