Integrated system and method for source/drain engineering

Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bao, Xinyu, Hon, Melitta Manyin, Chung, Hua, Yan, Chun, Chu, Schubert S
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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