Semiconductor device and method of forming stress relief layer between die and interconnect structure

A semiconductor device is made by forming a first conductive layer over a sacrificial carrier. A conductive pillar is formed over the first conductive layer. An active surface of a semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the cond...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yaojian, Yaojian, Shim, Il Kwon, Chow, Seng Guan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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