Hybrid ETSOI structure to minimize noise coupling from TSV

In one aspect, a method for forming an electronic device includes the following steps. An ETSOI layer of an ETSOI wafer is patterned into one or more ETSOI segments each of the ETSOI segments having a width of from about 3 nm to about 20 nm. A gate electrode is formed over a portion of the one or mo...

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Bibliographische Detailangaben

Hauptverfasser:	Silberman, Joel A, Lo, Shih-Hsien, Lin, Chung-Hsun, Lin, Yu-Shiang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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