Fin fabrication process with dual shallow trench isolation and tunable inner and outer fin profile

A self-aligned active region block mask is used to pattern and define a plurality of semiconductor fins as well as attendant shallow trench isolation (STI) structures. The block mask, a portion of which comprises a patterned fin hard mask, permits decoupling of inner and outer fin etch processes, as...

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Bibliographische Detailangaben

Hauptverfasser:	Greene, Brian J, Narasimha, Shreesh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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