3D magnetic memory device based on pure spin currents
The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to...
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| creator | Ozbay, Gokce Ozatay, Ozhan |
| description | The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack. |
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The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; STATIC STORES ; TRANSPORTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180918&DB=EPODOC&CC=US&NR=10079057B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180918&DB=EPODOC&CC=US&NR=10079057B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ozbay, Gokce</creatorcontrib><creatorcontrib>Ozatay, Ozhan</creatorcontrib><title>3D magnetic memory device based on pure spin currents</title><description>The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>NANOTECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>STATIC STORES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDA1dlHITUzPSy3JTFbITc3NL6pUSEkty0xOVUhKLE5NUcjPUygoLUpVKC7IzFNILi0qSs0rKeZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqUAT40ODDQ0MzC0NTM2djIyJUQMAJkks2g</recordid><startdate>20180918</startdate><enddate>20180918</enddate><creator>Ozbay, Gokce</creator><creator>Ozatay, Ozhan</creator><scope>EVB</scope></search><sort><creationdate>20180918</creationdate><title>3D magnetic memory device based on pure spin currents</title><author>Ozbay, Gokce ; Ozatay, Ozhan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10079057B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>NANOTECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>STATIC STORES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Ozbay, Gokce</creatorcontrib><creatorcontrib>Ozatay, Ozhan</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ozbay, Gokce</au><au>Ozatay, Ozhan</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>3D magnetic memory device based on pure spin currents</title><date>2018-09-18</date><risdate>2018</risdate><abstract>The invention relates to a three dimensional magnetic memory device (1) employing pure spin currents to write information into magnetic bits. The magnetic memory device (1) is formed of one or more stack of two storage layers (13) placed between two reference layers (9). The stacks are connected to each other through common reference electrodes (12) formed by connecting reference electrodes (11) placed on bottom of a first stack and on top of the second stack positioned under the first stack.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | ELECTRICITY INFORMATION STORAGE MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STATIC STORES TRANSPORTING |
| title | 3D magnetic memory device based on pure spin currents |
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