Measuring a process parameter for a manufacturing process involving lithography
There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based...
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| creator | Zhang, Youping Huang, Te-Chih Van Der Schaar, Maurits Den Boef, Arie Jeffrey Adam, Omer Abubaker Omer |
| description | There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount. |
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In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.</description><language>eng</language><subject>ACCESSORIES THEREFOR ; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES ; APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM ; APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TESTING</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180911&DB=EPODOC&CC=US&NR=10073357B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180911&DB=EPODOC&CC=US&NR=10073357B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Zhang, Youping</creatorcontrib><creatorcontrib>Huang, Te-Chih</creatorcontrib><creatorcontrib>Van Der Schaar, Maurits</creatorcontrib><creatorcontrib>Den Boef, Arie Jeffrey</creatorcontrib><creatorcontrib>Adam, Omer Abubaker Omer</creatorcontrib><title>Measuring a process parameter for a manufacturing process involving lithography</title><description>There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.</description><subject>ACCESSORIES THEREFOR</subject><subject>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</subject><subject>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPD3TU0sLi3KzEtXSFQoKMpPTi0uVihILErMTS1JLVJIyy8Ciucm5pWmJSaXQNTBVGXmleXnlIFEcjJLMvLTixILMip5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakl8aLChgYG5sbGpuZORMTFqALSLN-w</recordid><startdate>20180911</startdate><enddate>20180911</enddate><creator>Zhang, Youping</creator><creator>Huang, Te-Chih</creator><creator>Van Der Schaar, Maurits</creator><creator>Den Boef, Arie Jeffrey</creator><creator>Adam, Omer Abubaker Omer</creator><scope>EVB</scope></search><sort><creationdate>20180911</creationdate><title>Measuring a process parameter for a manufacturing process involving lithography</title><author>Zhang, Youping ; Huang, Te-Chih ; Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Adam, Omer Abubaker Omer</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10073357B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>ACCESSORIES THEREFOR</topic><topic>APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES</topic><topic>APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhang, Youping</creatorcontrib><creatorcontrib>Huang, Te-Chih</creatorcontrib><creatorcontrib>Van Der Schaar, Maurits</creatorcontrib><creatorcontrib>Den Boef, Arie Jeffrey</creatorcontrib><creatorcontrib>Adam, Omer Abubaker Omer</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhang, Youping</au><au>Huang, Te-Chih</au><au>Van Der Schaar, Maurits</au><au>Den Boef, Arie Jeffrey</au><au>Adam, Omer Abubaker Omer</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Measuring a process parameter for a manufacturing process involving lithography</title><date>2018-09-11</date><risdate>2018</risdate><abstract>There is disclosed a method of measuring a process parameter for a manufacturing process involving lithography. In a disclosed arrangement the method comprises performing first and second measurements of overlay error in a region on a substrate, and obtaining a measure of the process parameter based on the first and second measurements of overlay error. The first measurement of overlay error is designed to be more sensitive to a perturbation in the process parameter than the second measurement of overlay error by a known amount.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING |
| title | Measuring a process parameter for a manufacturing process involving lithography |
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