Method for fabricating a FinFET metallization architecture using a self-aligned contact etch

A method of fabricating a FinFET device includes a self-aligned contact etch where a source/drain contact module is performed prior to a replacement metal gate (RMG) module. In particular, the method involves forming a sacrificial gate over the channel region of a fin, and an interlayer dielectric o...

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Bibliographische Detailangaben

1. Verfasser:	Bouche, Guillaume
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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