Semiconductor devices and methods of manufacturing the same

Methods of forming an integrated circuit device are provided. The methods may include forming a gate structure on a substrate, forming a first etch mask on a sidewall of the gate structure, anisotropically etching the substrate using the gate structure and the first etch mask as an etch mask to form...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kim, JinBum, Moon, Kang Hun, Lee, Choeun, Jung, Sujin, Xu, Yang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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