Semiconductor memory device including first memory cell and second memory cell over first memory cell

The semiconductor device includes a first memory cell, and a second memory cell thereover. The first memory cell includes first and second transistors, and a first capacitor. The second memory cell includes third and fourth transistors, and a second capacitor. A gate of the first transistor is elect...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Atsumi, Tomoaki, Sugao, Junpei
Format: Patent
Sprache:eng
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