Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition

This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Endo, Takafumi, Fujitani, Noriaki, Sakamoto, Rikimaru
Format: Patent
Sprache:eng
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