Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region

An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension o...

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Bibliographische Detailangaben

Hauptverfasser:	Allegret-Maret, Stephane, Doris, Bruce, Loubet, Nicolas, Cheng, Kangguo, Khare, Prasanna, Liu, Qing
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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