Selective atomic layer deposition for gapfill using sacrificial underlayer

Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenche...

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Bibliographische Detailangaben

Hauptverfasser:	Ou, Fung Suong, Qian, Jun, Kumar, Purushottam, Karim, Ishtak, LaVoie, Adrien
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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