Apparatuses and methods for setting a signal in variable resistance memory

An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupl...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	Sanasi, Alessandro
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	Sanasi, Alessandro
description	An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10037791B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10037791B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10037791B23</originalsourceid><addsrcrecordid>eNqNyzEKwkAQRuFtLES9w3gAITFFsFRRxFatw5j8iQub2WVnFLy9Fh7A6jXfm7rzNiXObE-FEktHI-wRO6U-ZlKYeRmISf0gHMgLvTh7vgdQhno1lhbfZ4z5PXeTnoNi8evMLY-H6_60QooNNHELgTW3S1kUVV1vyt26-sd8ADCBNVg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Apparatuses and methods for setting a signal in variable resistance memory</title><source>esp@cenet</source><creator>Sanasi, Alessandro</creator><creatorcontrib>Sanasi, Alessandro</creatorcontrib><description>An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180731&DB=EPODOC&CC=US&NR=10037791B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180731&DB=EPODOC&CC=US&NR=10037791B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Sanasi, Alessandro</creatorcontrib><title>Apparatuses and methods for setting a signal in variable resistance memory</title><description>An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyzEKwkAQRuFtLES9w3gAITFFsFRRxFatw5j8iQub2WVnFLy9Fh7A6jXfm7rzNiXObE-FEktHI-wRO6U-ZlKYeRmISf0gHMgLvTh7vgdQhno1lhbfZ4z5PXeTnoNi8evMLY-H6_60QooNNHELgTW3S1kUVV1vyt26-sd8ADCBNVg</recordid><startdate>20180731</startdate><enddate>20180731</enddate><creator>Sanasi, Alessandro</creator><scope>EVB</scope></search><sort><creationdate>20180731</creationdate><title>Apparatuses and methods for setting a signal in variable resistance memory</title><author>Sanasi, Alessandro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10037791B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Sanasi, Alessandro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sanasi, Alessandro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Apparatuses and methods for setting a signal in variable resistance memory</title><date>2018-07-31</date><risdate>2018</risdate><abstract>An example of a method reads a spin torque transfer (STT) memory cell, and writes the STT memory cell using information obtained during the reading of the STT memory cell to set a pulse to write the STT memory cell. An example of an apparatus includes a STT memory cell and read/write circuitry coupled to the STT memory cell to determine a read current (IREAD) through the STT memory cell and to set a pulse to write the STT memory cell using IREAD. Additional embodiments are disclosed.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng
recordid	cdi_epo_espacenet_US10037791B2
source	esp@cenet
subjects	INFORMATION STORAGE PHYSICS STATIC STORES
title	Apparatuses and methods for setting a signal in variable resistance memory
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T06%3A27%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Sanasi,%20Alessandro&rft.date=2018-07-31&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10037791B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true