FinFET based flash memory cell

A method of manufacturing a flash memory cell is provided including forming a plurality of semiconductor fins on a semiconductor substrate, forming floating gates for a sub-set of the plurality of semiconductor fins and forming a first insulating layer between the plurality of semiconductor fins. Th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Baars, Peter, Faul, Juergen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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