Integrated DC-DC power converters through face-to-face bonding

DC-DC power converters with GaN switches, magnetic inductors and CMOS power drivers integrated through face-to-face wafer bonding techniques are provided. In one aspect, an integrated DC-DC power converter includes: a Si CMOS chip having at least one Si CMOS transistor formed thereon; a GaN switch c...

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Hauptverfasser:	Sprogis, Edmund J, Wang, Naigang, Deligianni, Hariklia, Sadana, Devendra K
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	Sprogis, Edmund J Wang, Naigang Deligianni, Hariklia Sadana, Devendra K
description	DC-DC power converters with GaN switches, magnetic inductors and CMOS power drivers integrated through face-to-face wafer bonding techniques are provided. In one aspect, an integrated DC-DC power converter includes: a Si CMOS chip having at least one Si CMOS transistor formed thereon; a GaN switch chip, bonded to the Si CMOS chip in a face-to-face manner, having at least one GaN transistor formed thereon; and an on-chip magnetic inductor present either on the Si CMOS chip or on the GaN switch chip. A method of forming an integrated DC-DC power converter is also provided.
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title	Integrated DC-DC power converters through face-to-face bonding
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