Structure for transistor switching speed improvement utilizing polar elastomers

An organic thin film transistor comprising a first gate, a second gate, a semiconducting layer located between the first gate and second gate and configured to operate as a channel and a source electrode and a drain electrode connected to opposing sides of the semiconductor layer. The organic thin f...

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Bibliographische Detailangaben

Hauptverfasser:	Manley, Robert George, He, Mingqian, Enicks, Darwin Gene
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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